Type Designator: TIP2955
Mar 10, 2019 Persamaan Ic Mosfet Dan Scr 10/3/2019 Persamaan transistor: nomor transistor: eropa: amerika: bc107 bc108 bc109 bc147 bc148 bc149 bc171 bc172 bc173 bc182 bc183 bc184 bc207 bc208 bc209 bc237 bc238 bc239 bc317 bc318 bc319: bc107 bc107 bc109 bc147 bc147 bc149 bc239 bc237 bc239 bc237 bc237 bc239 bc207 bc207 bc209 bc237 bc237 bc239 bc167 bc167 bc169. MOSFET adalah inti dari sebuah IC ( integrated Circuit ) yang di desain dan di fabrikasi dengan single chip karena ukurannya yang sangat kecil. MOSFET memiliki empat gerbang terminal antara lain adalah Source (S), Gate (G), Drain (D) dan Body(B). MOSFET bekerja secara elektonik memvariasikan sepanjang jalur pembawa muatan ( electron atau hole ). Dec 31, 2010 data persamaan transistor,fet,mosfet,semikonduktor,diode. IC Cross Reference. Gan klu transistor type K3850 dan PC 421 berapa Gan. Bab 1 membahas JFET, D-MOSFET dan E-MOSFET. Pembahasan dimulai dari konstruksi, prinsip kerja, karakteristik transfer dan output untuk ketiga keluarga FET tersebut. Bab 2 membahas beberapa metode pemberian bias FET. Bias yang sering dipakai.
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO218
TIP2955 Transistor Equivalent Substitute - Cross-Reference Search
TIP2955 Datasheet (PDF)
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0.1. tip2955-3055.pdf Size:47K _st
TIP2955TIP3055 COMPLEMENTARY SILICON POWERTRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICESDESCRIPTION The TIP3055 is a silicon epitaxial-base planarNPN transistor mountend in TO-218 plasticpackage and intented for power switchingcircuits, series and shunt regulators, output3stages and hi-fi amplifiers.2The complementary PNP type is the TIP2955
0.2. tip2955.pdf Size:37K _st
TIP2955TIP3055COMPLEMENTARY SILICON POWERTRANSISTORSn SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe TIP3055 is a silicon epitaxial-base planarNPN transistor mountend in TO-218 plasticpackage and intented for power switchingcircuits, series and shunt regulators, outputstages and hi-fi amplifiers.3The complementary PNP type is the TIP2955.21TO-218INTERNAL SCHEMATI
0.3. tip2955 tip3055.pdf Size:87K _st
TIP2955TIP3055Complementary power transistorsFeatures Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose Audio Amplifier321DescriptionTO-247The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications.Figure 1. Internal sche
0.4. tip3055 tip2955.pdf Size:61K _onsemi
TIP3055 (NPN),TIP2955 (PNP)Complementary SiliconPower TransistorsDesigned for general-purpose switching and amplifier applications.http://onsemi.comFeatures DC Current Gain - 15 AMPEREhFE = 20 - 70 @ IC POWER TRANSISTORS= 4.0 AdcCOMPLEMENTARY SILICON Collector-Emitter Saturation Voltage - 60 VOLTS, 90 WATTSVCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excell
0.5. tip2955.pdf Size:81K _bourns
TIP2955PNP SILICON POWER TRANSISTOR Designed for Complementary Use with the SOT-93 PACKAGE(TOP VIEW)TIP3055 Series 90 W at 25C Case TemperatureB1 15 A Continuous Collector CurrentC 2 Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maximum ratings at 25C case temperature (unless otherwi
0.6. tip2955 tip3055.pdf Size:107K _mospec
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0.7. tip2955f tip3055f.pdf Size:290K _cdil
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPOWER TRANSISTORS TIP2955F PNPTIP3055F NPNTO- 3P Fully IsolatedPlastic PackageBCEDesigned for General Purpose Switching and Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector-Emitter Voltage VCEO 60 VCollector-Emitter Voltage VCER 70 VCollector-
0.8. tip2955.pdf Size:221K _inchange_semiconductor
isc Silicon PNP Power Transistor TIP2955DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = -4AFE CCollector-Emitter Saturation Voltage-: V )= -1.1 V(Max)@ I = -4ACE(sat CComplement to Type TIP3055Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifi
0.9. tip2955t.pdf Size:217K _inchange_semiconductor
isc Silicon PNP Power Transistor TIP2955TDESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 0.8V(Max)@ I = 4ACE(sat CComplement to Type TIP2955TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifier
Datasheet: TIP147T, TIP150, TIP151, TIP152, TIP160, TIP161, TIP162, TIP29, C102, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F, TIP30, TIP3054.
LIST
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BJT: TMPTH81 | TMPTA93 | TMPTA92 | TMPTA70 | TMPTA64 | TMPTA63 | TMPTA56 | TMPTA55 | TMPT5401 | TMPT5087 | TMPT5086 | TMPT4403 | TMPT4402 | TMPT4126 | TMPT4125 | TMPT3906 | TMPT3905 | TMPT3798A | TMPT3798 | TMPT3638A | TMPT3638
Type Designator: C103
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Emitter Voltage |Vce|: 6 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 0.6 MHz
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Collector Capacitance (Cc): 75 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO5
C103 Transistor Equivalent Substitute - Cross-Reference Search
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C103 Datasheet (PDF)
0.1. dmc1030ufdb.pdf Size:347K _diodes
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DMC1030UFDBCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features ID MAX Low On-ResistanceDevice V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance Low Profile, 0.6mm Max Height 34m @ VGS = 4.5V 5.1A ESD Protected Gate 40m @ VGS = 2.5V 4.7A Q1 12V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) N-Channel 50m @ VGS
0.2. 2sc1034.pdf Size:453K _sony
0.3. 2sc1030.pdf Size:44K _jmnic
Power Transistors www.jmnic.com 2SC1030 Silicon NPN Transistors 1B 2E 3C Features With TO-3 package Low frequency power amplifications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IC Collector current-Continuous 6 A PD Total Power Dissipation@TC
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0.4. mmbtrc101ss mmbtrc102ss mmbtrc103ss mmbtrc104ss mmbtrc105ss mmbtrc106ss.pdf Size:106K _diotec
MMBTRC101SS ... MMBTRC106SSMMBTRC101SS ... MMBTRC106SSSurface Mount Bias Resistor TransistorsNPN NPNSMD Transistoren mit EingangsspannungsteilerVersion 2011-02-10Power dissipation Verlustleistung 200 mW 0.11.1 2.9Plastic case SOT-230.4 3Kunststoffgehuse (TO-236)TypeWeight approx. Gewicht ca. 0.01 gCode1 2Plastic material has UL classification 94V-
0.5. 2sc1034.pdf Size:181K _inchange_semiconductor
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1034DESCRIPTIONDC Current Gain -h = 4(Min)@ I = 0.75AFE CCollector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in general purpose power amplifier andswitching applicationsABSOLUTE MAXIMUM
Datasheet: C1, C100, C1001, C1002, C1003, C1004, C101, C102, 2N5088, C106, C112, C1-12, C118, C119, C12-28, C1-28, C150.
LIST
Last Update
BJT: TMPTH81 | TMPTA93 | TMPTA92 | TMPTA70 | TMPTA64 | TMPTA63 | TMPTA56 | TMPTA55 | TMPT5401 | TMPT5087 | TMPT5086 | TMPT4403 | TMPT4402 | TMPT4126 | TMPT4125 | TMPT3906 | TMPT3905 | TMPT3798A | TMPT3798 | TMPT3638A | TMPT3638